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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnJVY/NeLCS
Repositorysid.inpe.br/mtc-m16@80/2006/11.22.17.21   (restricted access)
Last Update2006:11.22.17.24.15 (UTC) marciana
Metadata Repositorysid.inpe.br/mtc-m16@80/2006/11.22.17.21.39
Metadata Last Update2018:06.05.01.17.06 (UTC) administrator
Secondary KeyINPE-14312-PRE/9400
ISSN0093-3813
Citation KeyRossiBarrUedaSilv:2006:4kCoMo
TitleA 4-kV/2-A/5-kHz compact modulator for nitrogen plasma ion implantation
Year2006
MonthOct
Access Date2024, May 19
Secondary TypePRE PI
Number of Files1
Size326 KiB
2. Context
Author1 Rossi, José Osvaldo
2 Barroso, Joaquim José
3 Ueda, Mário
4 Silva, Graziela da
Resume Identifier1 8JMKD3MGP5W/3C9JHJ5
2
3 8JMKD3MGP5W/3C9JHSB
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
3 LAP-INPE-MCT-BR
4 LAP-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 rossi@plasma.inpe.br
JournalIEEE Transactions on Plasma Science
Volume34
Number5
Pages1757-1765
History (UTC)2006-11-22 17:24:15 :: simone -> administrator ::
2008-06-10 22:43:59 :: administrator -> simone ::
2011-05-24 23:10:09 :: simone -> administrator ::
2014-04-16 17:25:23 :: administrator -> marciana :: 2006
2014-08-20 13:26:31 :: marciana -> administrator :: 2006
2018-06-05 01:17:06 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
Keywordscompact pulser
dc converter
insulated-gate bipolar transistor (IGBT) switch
nitrogen plasma implantation
pulse transformer
surface treatment
KV
AbstractTo treat stainless-steel surfaces by nitrogen plasma implantation, a solid-state compact modulator was devised, in which a 8.0-mu F capacitor discharges through a forward converter composed of a low-blocking-voltage insulated-gate-bipolar-transistor switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, a modulator was built to produce pulses with amplitudes of the order of 4 kV, duration of about 5.0 mu s, and rise time of similar to 1.0 mu s with maximum current/frequencies capabilities of 2.0 A and 5 kHz, respectively.
AreaFISPLASMA
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > A 4-kV/2-A/5-kHz compact...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target FileA 4kv2 a5 Khz.pdf
User Groupadministrator
marciana
simone
Reader Groupadministrator
marciana
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher allowfinaldraft
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ET2RFS
Citing Item Listsid.inpe.br/bibdigital/2013/09.25.21.49 3
sid.inpe.br/mtc-m21/2012/07.13.14.52.24 1
sid.inpe.br/mtc-m21/2012/07.13.14.56.06 1
DisseminationWEBSCI; PORTALCAPES; COMPENDEX; IEEEXplore.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel doi e-mailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url
7. Description control
e-Mail (login)marciana
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